M58WR064HT
M58WR064HB
64 Mbit (4Mb x16, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
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Supply voltage
– V
DD
= 1.7V to 2V for Program, Erase and
Read
– V
DDQ
= 1.7V to 2.24V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
Synchronous / asynchronous read
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 60ns, 70ns
Synchronous burst read suspend
Programming time
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
Common Flash Interface (CFI)
100,000 program/erase cycles per block
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FBGA
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VFBGA56 (ZB)
7.7 x 9 mm
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Electronic signature
– Manufacturer Code: 20h
– Device Codes:
M58WR064HT (Top): 8810h
M58WR064HB (Bottom): 8811h
Package
– ECOPACK®
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November 2007
Rev 3
1/111
1
NUMONYX [ NUMONYX B.V ]
