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NAND01GR3B2BZA6E 参数 Datasheet PDF下载

NAND01GR3B2BZA6E图片预览
型号: NAND01GR3B2BZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位, 2千兆位, 2112字节/ 1056字的页面, 1.8 / 3V , NAND快闪存储器 [1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
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Software algorithms
Figure 17. Error detection
NAND01G-B2B, NAND02G-B2C
New ECC generated
during read
XOR previous ECC
with new ECC
All results
= zero?
YES
22 bit data = 0
NO
>1 bit
= zero?
YES
11 bit data = 1
NO
1 bit data = 1
No Error
Correctable
Error
ECC Error
ai08332
8.6
8.6.1
Hardware simulation models
Behavioral simulation models
Denali Software Corporation models are platform independent functional models designed
to assist customers in performing entire system simulations (typical VHDL/Verilog). These
models describe the logic behavior and timings of NAND flash devices, and so allow
software to be developed before hardware.
8.6.2
IBIS simulations models
IBIS (I/O buffer information specification) models describe the behavior of the I/O buffers
and electrical characteristics of flash devices.
These models provide information such as AC characteristics, rise/fall times and package
mechanical data, all of which are measured or simulated at voltage and temperature ranges
wider than those allowed by target specifications.
IBIS models are used to simulate PCB connections and can be used to resolve compatibility
issues when upgrading devices. They can be imported into SPICETOOLS.
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