Description
Table 2.
Product description
NAND01G-B2B, NAND02G-B2C
Timings
Reference
Part number
Density
Bus
width
Page
size
Block
size
Memory
array
Operating Random Sequential
voltage
access
access
time
time
(max)
(min)
1.7 to
1.95 V
64
pages x
1024
blocks
2.7 to
3.6 V
1.7 to
1.95 V
2.7 to
3.6 V
1.7 to
1.95 V
64
pages x
2048
blocks
2.7 to
3.6 V
1.7 to
1.95 V
2.7 to
3.6 V
25 µs
25 µs
25 µs
25 µs
50 ns
30 ns
2 ms
50 ns
30 ns
200 µs
NAND02GR3B2C
x8
NAND02G
-B2C
NAND02GW3B2C
2Gbits
NAND02GR4B2C
x16
NAND02GW4B2C
1024 64K+
+32
2K
words words
2048
+64
bytes
128K
+4K
bytes
25 µs
50 ns
(1)
Page
Progra
m time
(typ)
Bloc
k
erase
(typ)
Package
NAND01GR3B2B
x8
NAND01GW3B2B
NAND01G
-B2B
NAND01GR4B2B
x16
NAND01GW4B2B
1Gbit
2048
+64
bytes
128K
+4K
bytes
VFBGA63
9 x 11 mm
TSOP48
1024 64K+
+32
2K
words words
(1)
VFBGA63
9.5 x 12 m
m
TSOP48
2 ms
(1)
25 µs
25 µs
25 µs
30 ns
50 ns
30 ns
(1)
1. x16 organization only available for MCP.
Figure 1.
Logic block diagram
Address
register/counter
X decoder
AL
CL
W
E
WP
R
Command
interface
logic
P/E/R controller,
high voltage
generator
NAND flash
memory array
Page buffer
Command register
Cache register
Y decoder
I/O buffers & latches
RB
I/O0-I/O7, x8/x16
I/O8-I/O15, x16
AI12799
8/60
NUMONYX [ NUMONYX B.V ]
