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NAND02GW3B2D 参数 Datasheet PDF下载

NAND02GW3B2D图片预览
型号: NAND02GW3B2D
PDF下载: 下载PDF文件 查看货源
内容描述: 2千兆位, 2112字节/ 1056字的页面多平面架构, 1.8 V或3V时, NAND快闪存储器 [2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories]
分类和应用: 闪存存储
文件页数/大小: 69 页 / 1812 K
品牌: NUMONYX [ NUMONYX B.V ]
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NAND02G-B2D
2-Gbit, 2112-byte/1056-word page
multiplane architecture, 1.8 V or 3 V, NAND flash memories
Preliminary Data
Features
High density NAND flash memory
– Up to 2 Gbits of memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3.0 V device
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic EDC (error
detection code)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks): 1.5 ms
(typ)
TSOP48 12 x 20 mm (N)
FBGA
VFBGA63 9.5 x 12 mm (ZA)
Status register
Electronic signature
Chip Enable ‘don’t care’
Serial number option
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
ONFI 1.0 compliant command set
Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
ECOPACK
®
packages
Device summary
Part number
NAND02GR3B2D
NAND02G-B2D
NAND02GW3B2D
NAND02GR4B2D
(1)
NAND02GW4B2D
(1)
Table 1.
Reference
1. x 16 organization only available for MCP products.
April 2008
Rev 3
1/69
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.