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NAND02GW3B2D 参数 Datasheet PDF下载

NAND02GW3B2D图片预览
型号: NAND02GW3B2D
PDF下载: 下载PDF文件 查看货源
内容描述: 2千兆位, 2112字节/ 1056字的页面多平面架构, 1.8 V或3V时, NAND快闪存储器 [2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories]
分类和应用: 闪存存储
文件页数/大小: 69 页 / 1812 K
品牌: NUMONYX [ NUMONYX B.V ]
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NAND02G-B2D
Ordering information
13
Ordering information
Table 31.
Example:
Device type
NAND flash memory
Density
02 G = 2 Gb
Operating voltage
W = V
DD
= 2.7 to 3.6 V
R = V
DD
= 1.7 to 1.95 V
Bus width
3 = x8
4 = x16
(1)
Family identifier
B = 2112-byte page
Device options
2 = Chip Enable ‘don't care’ enabled
Product version
D = Fourth version
Package
N = TSOP48 12 x 20 mm
ZA = VFBGA63 9.5 x 12 x 1 mm, 0.8 mm pitch
Temperature range
6 = –40 to 85 °C
Option
E = ECOPACK package, standard packing
F = ECOPACK package, tape and reel packing
1. x16 organization only available for MCP products.
Ordering information scheme
NAND02GW3B2D N
6
E
Note:
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to
’1’. For further information on any aspect of this device, please contact your nearest
Numonyx sales office.
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