NAND04G-B2D, NAND08G-BxC
4 Gbit, 8 Gbit, 2112 byte/1056 word page
multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Preliminary Data
Features
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High density NAND Flash Memory
– Up to 8 Gbit memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x8 or 16x bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3.0 V device
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128K + 4 K spare) bytes
– x16 device: (64K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic error
detection code (EDC)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial number option
NAND08G-BxC
TSOP48 12 x 20 mm (N)
LGA
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LGA52 12 x 17 mm (ZL)
r
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Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
ONFI 1.0 compliant command set
Data integrity
– 100 000 program/erase cycles (with ECC
(error correction code))
– 10 years data retention
ECOPACK
®
packages
Device Summary
Part number
NAND04GR3B2D
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Table 1.
Reference
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NAND04G-B2D
NAND04GW3B2D
NAND04GR4B2D
(1)
NAND04GW4B2D
(1)
NAND08GR3B2C,
NAND08GW3B2C
NAND08GR4B2C
(1)
NAND08GW4B2C
(1)
NAND08GR3B4C
NAND08GW3B4C
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1. x16 organization only available for MCP products.
December 2007
Rev 3
1/69
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
NUMONYX [ NUMONYX B.V ]
