NAND04GW3B2B
NAND08GW3B2A
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page
3V, NAND Flash Memories
Features
■
High density NAND Flash Memory
– up to 8 Gbit memory array
– Up to 256 Mbit spare area
– Cost effective solution for mass storage
applications
NAND Interface
– x8 bus width
– Multiplexed Address/ Data
Supply voltage
– 3.0V device: V
DD
= 2.7 to 3.6V
Page size
– (2048 + 64 spare) Bytes
Block size
– (128K + 4K spare) Bytes
Page Read/Program
– Random access: 25µs (max)
– Sequential access: 30ns (min)
– Page program time: 200µs (typ)
Copy Back Program mode
– Fast page copy without external buffering
Cache Program and Cache Read modes
– Internal Cache Register to improve the
program and read throughputs
Fast Block Erase
– Block erase time: 2ms (typ)
Status Register
Electronic Signature
Chip Enable ‘don’t care’
– for simple interface with microcontroller
Serial Number option
■
■
■
■
TSOP48 12 x 20mm
■
■
■
■
Data protection
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
ECOPACK
®
package
Development tools
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– File System OS Native reference software
– Hardware simulation models
■
■
■
■
■
■
■
■
December 2007
Rev 5
1/58
1
NUMONYX [ NUMONYX B.V ]
