NAND512R3A2C NAND512R4A2C
NAND512W3A2C NAND512W4A2C
512 Mbit, 528 byte/264 word page,
1.8 V/3 V, NAND Flash memories
Features
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High density NAND Flash memories
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512 Mbit memory array
Cost effective solutions for mass
storage applications
x 8 or x 16 bus width
Multiplexed Address/ Data
FBGA
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NAND interface
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TSOP48 12 x 20 mm
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Supply voltage: 1.8 V, 3.0 V
Page size
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x 8 device: (512 + 16 spare) bytes
x 16 device: (256 + 8 spare) words
x 8 device: (16 K + 512 spare) bytes
x 16 device: (8 K + 256 spare) words
Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
Page Program time: 200 µs (typ)
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Block size
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VFBGA55 8 x 10 x 1 mm
VFBGA63 9 x 11 x 1 mm
Hardware Data Protection
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Program/Erase locked during Power
transitions
100,000 Program/Erase cycles (with
ECC)
10 years Data Retention
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Page Read/Program
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Data integrity
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Copy Back Program mode
Fast Block Erase: 2 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial Number option
Device summary
Reference
ECOPACK
®
packages
Development tools
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Error Correction Code models
Bad Blocks Management and Wear
Leveling algorithms
Hardware simulation models
Table 1.
Part number
NAND512R3A2C
NAND512R4A2C
(1)
NAND512-A2C
NAND512W3A2C
NAND512W4A2C
1. x16 organization only available for MCP.
January 2008
Rev 2
1/51
1
NUMONYX [ NUMONYX B.V ]
