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RC28F128P30B85 参数 Datasheet PDF下载

RC28F128P30B85图片预览
型号: RC28F128P30B85
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆的StrataFlash嵌入式存储器 [Numonyx StrataFlash Embedded Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 99 页 / 1401 K
品牌: NUMONYX [ NUMONYX B.V ]
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Numonyx™ StrataFlash
(P30)
®
Embedded Memory
Datasheet
Product Features
High performance
— 85 ns initial access
— 52 MHz with zero wait states, 17ns clock-to-data output
synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming (BEFP) at 5
μs/
byte (Typ)
— 1.8 V buffered programming at 7
μs/byte
(Typ)
— Multi-Level Cell Technology: Highest Density at Lowest
Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom
configuration
— 128-KByte main blocks
Security
— One-Time Programmable Registers:
• 64 unique factory device identifier bits
• 2112 user-programmable OTP bits
— Selectable OTP Space in Main Array:
• Four pre-defined 128-KByte blocks (top or bottom
configuration)
• Up to Full Array OTP Lockout
— Absolute write protection: V
PP
= V
SS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Architecture
Software
— 20
μs
(Typ) program suspend
— 20
μs
(Typ) erase suspend
— Numonyx™ Flash Data Integrator optimized
— Basic Command Set and Extended Command Set
compatible
— Common Flash Interface capable
Voltage and Power
— V
CC
(core) voltage: 1.7 V – 2.0 V
— V
CCQ
(I/O) voltage: 1.7 V – 3.6 V
— Standby current: 20μA (Typ) for 64-Mbit
— 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology
Density and Packaging
— 56- Lead TSOP package (64, 128, 256,
512- Mbit)
— 64- Ball Numonyx™ Easy BGA package (64,
128, 256, 512- Mbit)
— Numonyx™ QUAD+ SCSP (64, 128, 256,
512- Mbit)
— 16-bit wide data bus
Order Number: 306666-11
November 2007