Numonyx™ Wireless Flash Memory
(W18/W30 SCSP)
32WQ and 64WQ Family with Asynchronous RAM
Datasheet
Product Features
Device Architecture
— Flash Density: 32-Mbit, 64-Mbit
— Async PSRAM Density: 16-Mbit, 32-Mbit
— Top, Bottom or Dual flash parameter
configuration
Device Voltage
— Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V
— RAM VCC = 1.8 V or 3.0 V
Device Packaging
— 88 balls (8 x 10 active ball matrix)
— Area: 8x10 mm
— Height: 1.2 mm to 1.4 mm
PSRAM Performance
— 70 ns initial access, 25 ns async page reads at
1.8 V I/O
— 70 ns initial access async PSRAM at 1.8 V
I/O
— 70 ns initial access, 25 ns async page
reads at 3.0 V I/O
SRAM Performance
— 70 ns initial access at 1.8 V or 3.0 V I/O
Quality and Reliability
— Extended Temperature: –25 °C to +85 °C
— Minimum 100K flash block erase cycle
— 90 nm ETOX™ IX flash technology
— 130 nm ETOX™ VIII flash technology
Flash Performance
— 65 ns initial access at 1.8 V I/O
— 70 ns initial access at 3.0 V I/O
— 25 ns async page at 1.8 V or 3.0 V I/O
— 14 ns sync reads (t
CHQV
) at 1.8 V I/O
— 20 ns sync reads (t
CHQV
) at 3.0 V I/O
— Enhanced Factory Programming:
3.10 µs/Word (Typ)
Flash Architecture
— Read-While-Write/Erase
— Asymmetrical blocking structure
— 4-KWord parameter blocks (Top or
Bottom)
— 32-KWord main blocks
— 4-Mbit partition size
— 128-bit One-Time Programmable
(OTP) Protection Register
— Zero-latency block locking
— Absolute write protection with block
lock using F-VPP and F-WP#
Flash Software
— Numonyx™ Flash Data Integrator
(FDI) and Common Flash Interface
(CFI)
Order Number: 251407-13
November 2007
NUMONYX [ NUMONYX B.V ]
