TYPICAL CHARACTERISTICS – 1030 MHz, TC = 25_C
PRODUCTION TEST FIXTURE
22
90
21.0
V
= 50 Vdc, f = 1030 MHz
V
= 50 Vdc, I
= 100 mA, f = 1030 MHz
DD
DD
DQ(A+B)
80
70
60
50
40
30
20
10
Pulse Width = 128 sec, Duty Cycle = 10%
20.5
20.0
Pulse Width = 128 sec, Duty Cycle = 10%
21
20
19
18
17
I
= 1000 mA
DQ(A+B)
19.5
19.0
18.5
18.0
17.5
17.0
G
ps
500 mA
D
100 mA
50
100
P
200
300
500 700
1000
50
100
500
, OUTPUT POWER (WATTS) PEAK
1000
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 10. Power Gain and Drain Efficiency
versus Output Power
Figure 11. Power Gain versus Output Power and
Quiescent Drain Current
1200
1000
800
24
22
I
= 100 mA, f = 1030 MHz
V
= 50 Vdc, I
= 100 mA, f = 1030 MHz
DQ(A+B)
DD
DQ(A+B)
Pulse Width = 128 sec, Duty Cycle = 10%
Pulse Width = 128 sec, Duty Cycle = 10%
T
= –55_C
C
25_C
85_C
20
18
16
14
12
600
50 V
400
200
0
45 V
40 V
35 V
500
V
= 30 V
DD
10
50
32
28
30
34
36
38
40
42
44
100
P
200
1000
P , INPUT POWER (dBm) PEAK
, OUTPUT POWER (WATTS) PEAK
in
out
Figure 12. Power Gain versus Output Power
and Drain Voltage
f
P1dB
(W)
P3dB
(W)
(MHz)
740
883
1030
Figure 13. Output Power versus Input Power
80
26
V
= 50 Vdc, I
= 100 mA, f = 1030 MHz
DD
DQ(A+B)
Pulse Width = 128 sec, Duty Cycle = 10%
70
24
22
20
18
16
14
12
D
T
= 25_C
–55_C
C
60
50
40
30
20
10
85_C
T
= –55_C
C
G
ps
25_C
85_C
0
200
400
600
800
1000
1200
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 14. Power Gain and Drain Efficiency versus
Output Power
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
10
NXP [ NXP ]
