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KGF2236 参数 Datasheet PDF下载

KGF2236图片预览
型号: KGF2236
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, SSOP-16]
分类和应用: 放大器光电二极管晶体管
文件页数/大小: 9 页 / 154 K
品牌: OKI [ OKI ELECTRONIC COMPONETS ]
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E2Q0056-18-73
¡ electronic components
This version: Jul. 1998
Previous version:
KGF2236
¡
electronic components
KGF2236
Dual Monolithic GaAs Power FET
GENERAL DESCRIPTION
The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that
features high efficiency at 3 V. Since the KGF2236 is made up of Driver FET and Power FET, that
is good to develop smaller and lighter. The KGF2236 specifications are guaranteed to fixed
matching circuit of 3.5 V and 835 MHz; external impedance-matching circuit are also required.
The KGF2236 provides high efficiency 60% (typical) with a 31.5 dBm (min. @Pin=7 dBm) output
at 3.5 V. The device is optimized for transmitter-final-stage amplifiers in Portable Handy Phones
(PHPs) and other 3 V analog cellular phone.
FEATURES
• Dual monolithic GaAs Power FET
• High efficiency: 60% (typ.)
• High gain: 25 dB
• Specifications guaranteed to a fixed matching circuit at 3.5 V, 835 MHz
• Package: 16PSSOP
PACKAGE DIMENSIONS
5.5±0.12
0.22±0.1
16
9
0.25±0.1
5.0±0.12
6.4±0.2
0.70±0.2
1
0.65±0.1
(4.55)
8
1.1
(2.6)
(2.6)
(3.0)
(Unit: mm)
1/9