OKI Semiconductor
MD56V62160E
4-Bank
×
1,048,576-Word
×
16-Bit SYNCHRONOUS DYNAMIC RAM
FEDD56V62160E-01
Issue Date: Feb. 4, 2002
DESCRIPTION
The MD56V62160E is a 4-Bank
×
1,048,576-word
×
16-bit Synchronous dynamic RAM fabricated in
Oki’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL
compatible.
FEATURES
•
Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 4-Bank
×
1,048,576-word
×
16-bit configuration
•
Single 3.3 V power supply,
±0.3
V tolerance
•
Input : LVTTL compatible
•
Output : LVTTL compatible
•
Refresh : 4096 cycles/64 ms
•
Programmable data transfer mode
- CAS Latency (1, 2, 3)
- Burst Length (1, 2, 4, 8, Full Page)
- Data scramble (sequential, interleave)
•
CBR auto-refresh, Self-refresh capability
• Packages:
54-pin 400 mil plastic TSOP (TypeII)
(
TSOP(2)54-P-400-0.80-K
)
(Product: MD56V62160E-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Family
Max.
Frequency
143 MHz
100 MHz
Access Time (Max.)
t
AC2
6 ns
6 ns
t
AC3
6 ns
6 ns
MD56V62160E-7
MD56V62160E-10
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