E2G0009-17-41
¡ Semiconductor
MSM511000C/CL
¡ Semiconductor
This version: Jan. 1998
MSM511000C/CL
Previous version: May 1997
1,048,576-Word
¥
1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM511000C/CL is a 1,048,576-word
¥
1-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM511000C/CL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
single-layer metal CMOS process. The MSM511000C/CL is available in a 26/20-pin plastic SOJ or
20-pin plastic ZIP. The MSM511000CL (the low-power version) is specially designed for lower-
power applications.
FEATURES
• 1,048,576-word
¥
1-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version)
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM511000C/CL-xxJS)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM511000C/CL-xxZS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM511000C/CL-45
MSM511000C/CL-50
MSM511000C/CL-60
MSM511000C/CL-70
Access Time (Max.)
t
RAC
45 ns
50 ns
60 ns
70 ns
t
AA
24 ns
26 ns
30 ns
35 ns
t
CAC
14 ns
14 ns
15 ns
20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
100 ns
120 ns
130 ns
468 mW
440 mW
385 mW
330 mW
5.5 mW/
1.1 mW (L-version)
1/15