PEDD514265ESL-01
This version : Jan. 2001
Semiconductor
MSM514265E/ESL
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
Preliminary
DESCRIPTION
The MSM514265E/ESL is a 262,144-word
×
16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS
process. The MSM514265E/ESL is available in a 40-pin plastic SOJ or 44/40-pin plastic TSOP. The
MSM514265ESL (the Self-refresh version) is specially designed for lower-power applications.
FEATURES
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262,144-word
×
16-bit configuration
Single 5V power supply,
±10%
tolerance
Input
Output
Refresh
: TTL compatible, low input capacitance
: TTL compatible, 3-state
: 512 cycles/8ms, 512 cycles/128 ms (SL version)
Fast page mode with EDO, read modify write capability
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
CAS
before
RAS
self-refresh capability (SL version)
Package options:
40-pin 400mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM514265E/ESL-xxJS)
xx indicates speed rank.
44/40-pin 400mil plastic TSOP (TSOPII44/40-P-400-0.80-K) (Product : MSM514265E./ESL-xxTS-K)
PRODUCT FAMILY
Access Time (Max.)
Family
MSM514265E/ESL
t
RAC
60ns
70ns
t
AA
30ns
35ns
t
CAC
15ns
20ns
t
OEA
15ns
20ns
Cycle Time
(Min.)
104ns
124ns
Power Dissipation
Operating (Max.)
633mW
578mW
Standby (Max.)
5.5mW/
1.1mW (SL version)