PEDD514400EL-01
This version : Jan. 2001
Semiconductor
MSM514400E/EL
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
Preliminary
DESCRIPTION
The MSM514400E/EL is a 1,048,576-word
×
4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM514400E/EL is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP. The MSM514400EL (the
low-power version) is specially designed for lower-power applications.
FEATURES
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1,048,576-word
×
4-bit configuration
Single 5V power supply,
±
10% tolerance
Input
Output
Refresh
: TTL compatible, low input capacitance
: TTL compatible, 3-state
: 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
Fast page mode, read modify write capability
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
Multi-bit test mode capability
Package options:
26/20-pin 300mil plastic SOJ
26/20-pin 300mil plastic TSOP
(SOJ26/20-P-300-1.27)
(TSOPII26/20-P-300-1.27-K)
(Product : MSM514400E/EL-xxSJ)
(Product : MSM514400E/EL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514400E/EL-60
MSM514400E/EL-70
Access Time (Max.)
t
RAC
60ns
70ns
t
AA
30ns
35ns
t
CAC
15ns
20ns
t
OEA
15ns
20ns
Power Dissipation
Cycle Time
(Min.)
Operating (Max.) Standby (Max.)
110ns
130ns
468mW
413mW
5.5mW/
1.1mW (L-version)
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