FEDD514800ESL-01
This version : Dec. 2000
1
Semiconductor
MSM514800E/ESL
524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514800E/ESL is a 524,288-word
×
8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM514800E/ESL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS
process. The MSM514800E/ESL is available in a 28-pin plastic SOJ. The MSM514800ESL (the self-refresh and
lower-power version) is specially designed for lower-power applications.
FEATURES
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524,288-word
×
8-bit configuration
Single 5V power supply,
±10%
tolerance
Input
Output
Refresh
: TTL compatible, low input capacitance
: TTL compatible, 3-state
: 1,024 cycles/16 ms, 1,024 cycles/128 ms (SL Version)
Fast page mode, read modify write capability
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
CAS
before
RAS
self-refresh capability (SL version)
Package options:
28-pin 400mil plastic SOJ
(SOJ28-P-400-1.27)
(Product : MSM514800E/ESL-xxJS)
xx : indicates speed rank.
PRODUCT FAMILY
Family
Access Time (Max.)
t
RAC
60ns
70ns
t
AA
30ns
35ns
t
CAC
15ns
20ns
t
OEA
15ns
20ns
Cycle Time
(Min.)
110ns
130ns
Power Dissipation
Operating (Max.)
550mW
495mW
Standby (Max.)
5.5mW/
1.1mW (SL Version)
MSM514800E/ESL
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