FEDD51V4400E-01
This version : Aug. 2000
Semiconductor
MSM51V4400E
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V4400E is a 1,048,576-word
×
4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM51V4400E achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM51V4400E is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP.
FEATURES
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1,048,576-word
×
4-bit configuration
Single 3.3V power supply,
±0.3V
tolerance
Input
Output
Refresh
: LVTTL compatible, low input capacitance
: LVTTL compatible, 3-state
: 1024 cycles/16 ms
Fast page mode, read modify write capability
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
Multi-bit test mode capability
Package options:
26/20-pin 300mil plastic SOJ
26/20-pin 300mil plastic TSOP
(SOJ26/20-P-300-1.27)
(TSOPII26/20-P-300-1.27-K)
(Product : MSM51V4400E-xxSJ)
(Product : MSM51V4400E-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM51V4400E-70
MSM51V4400E-10
Access Time (Max.)
t
RAC
70ns
100ns
t
AA
35ns
50ns
t
CAC
20ns
25ns
t
OEA
20ns
25ns
Power Dissipation
Cycle Time
(Min.)
Operating (Max.) Standby (Max.)
130ns
180ns
234mW
198mW
1.8mW
1/14