E2L0022-17-Y1
¡ Semiconductor
MSM5416282
¡ Semiconductor
262,144-Word
¥
16-Bit Multiport DRAM
This version: Jan. 1998
MSM5416282
Previous version: Dec. 1996
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DESCRIPTION
The MSM5416282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit
dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
asynchronously.
It supports three types of operations: random access to RAM port, high speed serial access to
SAM port, and bidirectional transfer of data between any selected row in the RAM port and the
SAM port. In addition to the conventional multiport DRAM operating modes, the MSM5416282
features block write and flash write functions on the RAM port, and a split data transfer
capability on the SAM port. The SAM port requires no refresh operation because it uses static
CMOS flip-flops.
FEATURES
• Single power supply: 5 V
±10%
•
RAS
only refresh
• Full TTL compatibility
•
CAS
before
RAS
refresh
• Multiport organization
• Hidden refresh
RAM : 256K word
¥
16 bits
• Serial read/write
SAM : 512 word
¥
16 bits
• 512 tap location
• Fast page mode
• Bidirectional data transfer
• Write per bit
• Split transfer
• Byte write
• Masked write transfer
• Masked flash write
• Refresh: 512 cycles/8 ms
• Masked block write (8 columns)
• Package:
64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K) (Product : MSM5416282-xxGS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5416282-50
MSM5416282-60
MSM5416282-70
Access Time
RAM
50 ns
60 ns
70 ns
SAM
17 ns
18 ns
20 ns
Cycle Time
RAM
110 ns
120 ns
140 ns
SAM
20 ns
22 ns
22 ns
Power Dissipation
Operating
180 mA
170 mA
160 mA
Standby
8 mA
8 mA
8 mA
1/37
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