E2G1049-18-33
¡ Semiconductor
MSM56V16160D/DH
¡ Semiconductor
This
MSM56V16160D/DH
version: Mar. 1998
e
Pr
lim
y
ar
in
2-Bank
¥
524,288-Word
¥
16-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16160D/DH is a 2-bank
¥
524,288-word
¥
16-bit synchronous dynamic RAM,
fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
inputs and outputs are LVTTL compatible.
FEATURES
•
•
•
•
•
•
•
Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
2-bank
¥
524,288-word
¥
16-bit configuration
3.3 V power supply,
±0.3
V tolerance
Input
: LVTTL compatible
Output : LVTTL compatible
Refresh : 4096 cycles/64 ms
Programmable data transfer mode
–
CAS
latency (1, 2, 3)
–
CAS
latency (2, 3)*
1
– Burst length (1, 2, 4, 8, full page)
– Burst length (1, 2, 4, 8)*
1
– Data scramble (sequential, interleave)
*
1
: H version only.
• CBR auto-refresh, Self-refresh capability
• Package:
50-pin 400 mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K)
(Product : MSM56V16160D/DH-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM56V16160D-10
MSM56V16160D-12
MSM56V16160DH-15
Max.
Frequency
100 MHz
83 MHz
66 MHz
Access Time (Max.)
t
AC2
9 ns
14 ns
9 ns
t
AC3
9 ns
10 ns
9 ns
1/30
OKI [ OKI ELECTRONIC COMPONETS ]
