¡ Semiconductor
MSM7704-01/02/03
ELECTRICAL CHARACTERISTICS
DC and Digital Interface Characteristics
(V
DD
= 2.7 V to 3.8 V, Ta = –30°C to +85°C)
Parameter
Symbol
I
DD1
I
DD2
Condition
Operating mode, No signal
Power-save mode, PDN = 1,
Power Supply Current
XSYNC or BCLK OFF
Power-down mode, PDN = 0
Digital input is at 0 V
—
—
—
—
Pull-up resistance
>
500
W
—
—
—
1.0
4.0
mA
Min.
—
Typ.
10.0
Max.
14.0
Unit
mA
I
DD3
Input High Voltage
Input Low Voltage
High Level Input Leakage Current
Low Level Input Leakage Current
Digital Output Low Voltage
Digital Output Leakage Current
Input Capacitance
V
IH
V
IL
I
IH
I
IL
V
OL
I
O
C
IN
—
0.45
¥
V
DD
0.0
—
—
0.0
—
—
0.01
—
—
—
—
0.2
—
5
0.05
V
DD
0.16
¥
V
DD
2.0
0.5
0.4
10
—
mA
V
V
mA
mA
V
mA
pF
Transmit Analog Interface Characteristics
(V
DD
= 2.7 V to 3.8 V, Ta = –30°C to +85°C)
Parameter
Input Resistance
Output Load Resistance
Output Load Capacitance
Output Amplitude
Offset Voltage
Symbol
R
INX
R
LGX
C
LGX
V
OGX
V
OSGX
Gain = 1
Condition
AIN1, AIN2
GSX1, GSX2
with respect to SG
Min.
10
20
—
–0.7
–20
Typ.
—
—
—
—
—
Max.
—
—
30
+0.7
+20
Unit
MW
kW
pF
V
mV
Receive Analog Interface Characteristics
(V
DD
= 2.7 V to 3.8 V, Ta = –30°C to +85°C)
Parameter
Output Load Resistance
Output Load Capacitance
Output Amplitude
Offset Voltage
Symbol
R
LAO
C
LAO
V
OAO
V
OSAO
Condition
AOUT1, AOUT2 (each) with
respect to SG
AOUT1, AOUT2
AOUT1, AOUT2, R
L
= 1.2 kW
with respect to SG
AOUT1, AOUT2 with respect
to SG
Min.
1.2
—
–1
–100
Typ.
—
—
—
—
Max.
—
50
+1
+100
Unit
kW
pF
V
mV
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