Photomicrosensor (Reflective)
EE-SB5(-B)
■
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
■
Features
•
Dust-tight construction.
•
With a visible-light intercepting filter which allows objects to be
sensed without being greatly influenced by the light radiated from
fluorescent lamps.
•
Mounted with M3 screws.
•
Model with soldering terminals (EE-SB5).
•
Model with PCB terminals (EE-SB5-B).
•
RoHS Compliant.
Two, 3.2±0.2 dia. holes
Optical axis
Optical axis
■
Absolute Maximum Ratings (Ta = 25° C)
Item
Emitter
Forward current
Pulse forward current
Reverse voltage
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipation
Ambient
Operating
temperature Storage
Soldering temperature
Symbol
I
F
I
FP
V
R
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Rated value
50 mA (see note 1)
1 A (see note 2)
4V
30 V
---
20 mA
100 mW (see note 1)
–25° C to 80° C
–30° C to 80° C
260° C (see note 3)
9±0.2
11.5±0.2
Four, 0.5
Four, 0.25
7.62±0.3
2.54±0.2
EE-SB5
2.54±0.2
EE-SB5-B
Internal Circuit
A
C
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
3
<
mm
≤
6
6
<
mm
≤
10
10
<
mm
≤
18
18
<
mm
≤
30
Tolerance
K
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
±
0.3
±
0.375
±
0.45
±
0.55
±
0.65
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25° C.
2.
The pulse width is 10
µs
maximum with a frequency of 100 Hz.
3.
Complete soldering within 10 seconds.
■
Ordering Information
Description
Photomicrosensor (reflective)
with soldering terminals
Photomicrosensor (reflective)
with PCB terminals
EE-SB5
EE-SB5-B
Model
■
Electrical and Optical Characteristics (Ta = 25° C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Detector
Light current
V
F
I
R
λ
P
I
L
Symbol
Value
1.2 V typ., 1.5 V max.
0.01
µA
typ., 10
µA
max.
940 nm typ.
200
µA
min., 2,000
µA
max.
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA, V
CE
= 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
V
CE
= 10 V, 0
lx
I
F
= 20 mA, V
CE
= 10 V with no
reflection
---
V
CE
= 10 V
V
CC
= 5 V, R
L
= 1 kΩ, I
L
= 1 mA
V
CC
= 5 V, R
L
= 1 kΩ, I
L
= 1 mA
Condition
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
2 nA typ., 200 nA max.
2
µA
max.
---
850 nm typ.
30
µs
typ.
30
µs
typ.
Note:
The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Photomicrosensor (Reflective)
EE-SB5(-B)
1
OMRON [ OMRON ELECTRONICS LLC ]
