Photomicrosensor (Transmissive)
EE-SX1103
■
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
■
Features
•
•
•
•
Ultra-compact with a sensor width of 5 mm and a slot width of 2 mm.
PCB mounting type.
High resolution with a 0.4-mm-wide aperture.
RoHS Compliant.
Two, C0.5
Gate
Optical
axis
■
Absolute Maximum Ratings (Ta = 25° C)
Item
Emitter
Forward current
Reverse voltage
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Symbol
I
F
V
R
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
---
5V
30 V
4.5 V
30 mA
80 mW (see note 1)
–25° C to 85° C
–30° C to 100° C
260° C (see note 2)
Rated value
50 mA (see note 1)
Pulse forward current
I
FP
Two, C0.3
dia.
5 min.
Four, 0.5
Four, 0.2
Internal Circuit
Collector dissipation
P
C
Ambient
Operating
temperature Storage
Soldering temperature
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are
±0.2
mm.
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25° C.
2.
Complete soldering within 3 seconds.
■
Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1103
■
Electrical and Optical Characteristics (Ta = 25° C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Detector
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
V
F
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
Symbol
10
µA
max.
950 nm typ.
0.5 mA min.
500 nA max.
---
0.4 V max.
800 nm typ.
10
µs
typ.
10
µs
typ.
Value
1.3 V typ., 1.6 V max.
I
F
= 50 mA
V
R
= 5 V
I
F
= 50 mA
I
F
= 20 mA, V
CE
= 5 V
V
CE
= 10 V, 0
lx
---
I
F
= 20 mA, I
L
= 0.3 mA
V
CE
= 5 V
V
CC
= 5 V, R
L
= 100
Ω,
I
F
= 20 mA
V
CC
= 5 V, R
L
= 100
Ω,
I
F
= 20 mA
Condition
Photomicrosensor (Transmissive)
EE-SX1103
1