EE-SY169A 参数 Datasheet PDF下载

Photomicrosensor (Reflective)

EE-SY169A

■

Dimensions

Note:

All units are in millimeters unless otherwise indicated.

■

Features

•

High-quality model with plastic lenses.

•

Highly precise sensing range with a tolerance of

±0.6

mm horizon-

tally and vertically.

•

Convergent reflective model with infrared LED.

•

RoHS Compliant.

■

Absolute Maximum Ratings (Ta = 25° C)

Item

Emitter

Surface A

Two, C0.2

1±0.1 dia.

Symbol

I

F

I

FP

V

R

Rated value

50 mA (see note 1)

1 A (see note 2)

3V

30 V

---

20 mA

100 mW (see note 1)

0° C to 70° C

–20° C to 80° C

260° C (see note 3)

Forward current

Pulse forward

current

1±0.1 dia.

(see note)

(see note)

Reverse voltage

Detector

Collector–Emitter

V

CEO

voltage

Emitter–Collector

V

ECO

voltage

Collector current

I

C

P

C

Topr

Tstg

Tsol

Collector

dissipation

Internal Circuit

A

C

K

E

Note:

These dimensions are for the

surface A. Other lead wire

pitch dimensions are for the

housing surface.

Unless otherwise specified, the

tolerances are as shown below.

Dimensions

Tolerance

3 mm max.

3

<

mm

≤

6

6

<

mm

≤

10

10

<

mm

≤

18

18

<

mm

≤

30

Ambient

Operating

temperature Storage

Soldering temperature

Terminal No.

A

K

C

E

Name

Anode

Cathode

Collector

Emitter

±

0.3

±

0.375

±

0.45

±

0.55

±

0.65

Note: 1.

Refer to the temperature rating chart if the ambient temper-

ature exceeds 25° C.

2.

The pulse width is 10

µs

maximum with a frequency of 100 Hz.

3.

Complete soldering within 10 seconds.

■

Ordering Information

Description

Photomicrosensor (reflective)

Model

EE-SY169A

■

Electrical and Optical Characteristics (Ta = 25° C)

Item

Emitter

Forward voltage

Reverse current

Peak emission wavelength

Detector

Light current

V

F

I

R

λ

P

I

L

Symbol

1.5 V max.

10

µA

max.

920 nm typ.

160

µA

min., 2,000

µA

max.

Value

I

F

= 30 mA

V

R

= 4 V

I

F

= 20 mA

I

F

= 20 mA, V

CE

= 5 V

White paper with a reflection ratio of

90%, d = 4 mm (see note)

V

CE

= 5 V, 0

lx

I

F

= 20 mA, V

CE

= 5 V with no

reflection

---

V

CE

= 5 V

V

CC

= 5 V, R

L

= 1 kΩ, I

L

= 1 mA

V

CC

= 5 V, R

L

= 1 kΩ, I

L

= 1 mA

Condition

Dark current

Leakage current

Collector–Emitter saturated

voltage

Peak spectral sensitivity

wavelength

Rising time

Falling time

I

D

I

LEAK

V

CE

(sat)

λ

P

tr

tf

2 nA typ., 200 nA max.

2

µA

max.

---

850 nm typ.

30

µs

typ.

30

µs

typ.

Note:

The letter “d” indicates the distance between the top surface of the sensor and the sensing object.

Photomicrosensor (Reflective)

EE-SY169A

1