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EE-SY171 参数 Datasheet PDF下载

EE-SY171图片预览
型号: EE-SY171
PDF下载: 下载PDF文件 查看货源
内容描述: 微型光电(反光) [Photomicrosensor (Reflective)]
分类和应用: 光电传感器换能器线性位置传感器
文件页数/大小: 4 页 / 237 K
品牌: OMRON [ OMRON ELECTRONICS LLC ]
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Photomicrosensor (Reflective)
EE-SY171
I
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
Two, 2 dia.
Two, 1.2 dia.
Anode mark
I
Features
3-mm-tall, thin model
RoHS Compliant.
I
Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Forward current
Pulse forward
current
Reverse voltage
Detector
Symbol
I
F
I
FP
V
R
Rated value
50 mA (see note 1)
1 A (see note 2)
4V
30 V
---
20 mA
100 mW (see note 1)
–40°C to 85°C
–40°C to 85°C
260°C (see note 3)
Four, 0.5
Collector–Emitter
V
CEO
voltage
Emitter–Collector
V
ECO
voltage
Collector current
Collector
dissipation
I
C
P
C
Topr
Tstg
Tsol
0° to 30°
Four, 0.25
Internal Circuit
A
C
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
3
<
mm
6
6
<
mm
10
10
<
mm
18
18
<
mm
30
Tolerance
Ambient
temperature
Operating
Storage
Soldering temperature
K
E
±
0.3
±
0.375
±
0.45
±
0.55
±
0.65
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2.
The pulse width is 10
µs
maximum with a frequency of 100 Hz.
3.
Complete soldering within 10 seconds.
I
Ordering Information
Description
Photomicrosensor (reflective)
Model
EE-SY171
I
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Detector
Light current
V
F
I
R
λ
P
I
L
Symbol
Value
1.2 V typ., 1.5 V max.
0.01
µA
typ., 10
µA
max.
940 nm typ.
50
µA
min., 500
µA
max.
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA, V
CE
= 10 V
White paper with a reflection ratio of 90%,
d = 3.5 mm (see note)
V
CE
= 10 V, 0
lx
I
F
= 20 mA, V
CE
= 10 V with no reflection
---
V
CE
= 10 V
V
CC
= 5 V, R
L
= 1 kΩ, I
L
= 1 mA
V
CC
= 5 V, R
L
= 1 kΩ, I
L
= 1 mA
Condition
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
2 nA typ., 200 nA max.
2
µA
max.
---
850 nm typ.
30
µs
typ.
30
µs
typ.
Note:
The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
306
Photomicrosensor (Reflective)
EE-SY171