Photomicrosensor (Reflective)
EE-SY313/-SY413
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Dimensions
Note:
All units are in millimeters unless otherwise indicated.
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Features
•
Incorporates an IC chip with a built-in detector element and amplifier.
•
Incorporates a detector element with a built-in temperature com-
pensation circuit.
•
Compact reflective Photomicrosensor (EE-SY310/-SY410) with a
molded housing and a dust-tight cover.
•
A wide supply voltage range: 4.5 to 16 VDC
•
Directly connects with C-MOS and TTL.
•
Dark ON model (EE-SY313); Light ON model (EE-SY413)
•
RoHS Compliant.
Five, 0.5
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Absolute Maximum Ratings (Ta = 25°C)
Item
Forward current
Reverse voltage
Pulse forward current
Detector
Power supply voltage
Output voltage
Output current
Permissible output
dissipation
Ambient
Operating
temperature Storage
Soldering temperature
Emitter
Symbol
I
F
V
R
I
FP
V
CC
V
OUT
I
OUT
P
OUT
Topr
Tstg
Tsol
Rated value
50 mA (see note 1)
4V
1 A (see note 2)
16 V
28 V
16 mA
250 mW
(see note 1)
–40°C to 65°C
–40°C to 85°C
260°C (see note 3)
15 to 18
17 to 24
Internal Circuit
A
V
O
K
G
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
3
<
mm
≤
6
6
<
mm
≤
10
10
<
mm
≤
18
18
<
mm
≤
30
Tolerance
Terminal No.
A
K
V
O
G
Name
Anode
Cathode
Power supply
(Vcc)
Output (OUT)
Ground (GND)
±
0.3
±
0.375
±
0.45
±
0.55
±
0.65
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2.
The pulse width is 10
µs
maximum with a frequency of 100 Hz.
3.
Complete soldering within 10 seconds.
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Ordering Information
Description
Photomicrosensor (reflective)
Model
Dark ON
EE-SY313
Light ON
EE-SY413
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Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Item
Forward voltage
Reverse current
Peak emission wavelength
Detector
Low-level output voltage
High-level output voltage
Current consumption
Peak spectral sensitivity
wavelength
LED current when output is OFF
LED current when output is ON
Hysteresis
Response frequency
Response delay time
Response delay time
Symbol
Value
V
F
1.2 V typ., 1.5 V max.
I
R
λ
P
V
OL
V
OH
I
CC
λ
P
I
FT
∆H
f
0.01
µA
typ., 10
µA
max.
920 nm typ.
0.12 V typ., 0.4 V max.
15 V min.
3.2 mA typ., 10 mA max.
870 nm typ.
10 mA typ., 20 mA max.
17% typ.
50 pps min.
Condition
I
F
= 20 mA
V
R
= 4 VD
I
F
= 20 mA
Vcc = 4.5 to 16 V, I
OL
= 16 mA, without incident light (EE-
SY313), with incident light (EE-SY413) (see notes 1 and 2)
Vcc = 16 V, R
L
= 1 kΩ, with incident light (EE-SY313), without
incident light (EE-SY413) (see notes 1 and 2)
Vcc = 16 V
V
CC
= 4.5 to 16 V
V
CC
= 4.5 to 16 V
V
CC
= 4.5 to 16 V
V
CC
= 4.5 to 16 V, I
F
= 20 mA, I
OL
= 16 mA
V
CC
= 4.5 to 16 V, I
F
= 20 mA, I
OL
= 16 mA
V
CC
= 4.5 to 16 V, I
F
= 20 mA, I
OL
= 16 mA
t
PLH
(t
PHL
) 3
µs
typ.
t
PHL
(t
PLH
) 20
µs
typ.
320
Photomicrosensor (Reflective)
EE-SY313/-SY413
OMRON [ OMRON ELECTRONICS LLC ]
