2N4401
Preferred Device
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
•
Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
W
mW/°C
°C
mW
mW/°C
1
2
3
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
2
BASE
1
EMITTER
MARKING
DIAGRAM
2N
4401
YWW
TO−92
CASE 29
STYLE 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Y
WW
= Year
= Work Week
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
Preferred
devices are recommended choices for future use
and best overall value.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 1
Publication Order Number:
2N4401/D
ONSEMI [ ON SEMICONDUCTOR ]
