2N4402 2N4403
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
hFE
2N4403
2N4402
2N4403
2N4402
2N4403
2N4402
2N4403
Both
VCE(sat)
—
—
VBE(sat)
0.75
—
0.95
1.3
0.4
0.75
Vdc
30
30
60
50
100
50
100
20
—
—
—
—
—
150
300
—
Vdc
—
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)(1)
(IC = 500 mAdc, VCE = 2.0 Vdc)(1)
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
hoe
2N4402
2N4403
hre
hfe
30
60
1.0
250
500
100
µmhos
fT
2N4402
2N4403
Ccb
Ceb
hie
750
1.5 k
0.1
7.5 k
15 k
8.0
X 10–4
—
150
200
—
—
—
—
8.5
30
pF
pF
ohms
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, VBE = + 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mA, IB2 = 15 mA)
td
tr
ts
tf
—
—
—
—
15
20
225
30
ns
ns
ns
ns
1. Pulse Test: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
– 30 V
< 2 ns
+2 V
0
1.0 kΩ
– 16 V
10 to 100
µs,
DUTY CYCLE = 2%
CS* < 10 pF
200
Ω
+14 V
0
1.0 kΩ
–16 V
1.0 to 100
µs,
DUTY CYCLE = 2%
CS* < 10 pF
< 20 ns
– 30 V
200
Ω
+ 4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
2
Figure 2. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ONSEMI [ ON SEMICONDUCTOR ]
