2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
•
Pb−Free Packages are Available*
•
Device Marking: Device Type, e.g., 2N5550, Date Code
http://onsemi.com
COLLECTOR
3
2
BASE
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
W
mW/°C
°C
55xx
Y
WW
Specific Device Code
= Year
= Work Week
mW
mW/°C
12
TO−92
CASE 29
STYLE 1
3
2N
55xx
YWW
2N5550 2N5551
140
160
6.0
600
160
180
Unit
Vdc
Vdc
Vdc
mAdc
1
EMITTER
MARKING
DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 3
Publication Order Number:
2N5550/D
ONSEMI [ ON SEMICONDUCTOR ]
