BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Features
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
Continuous Forward Current
Peak Forward Surge Current
Junction and Storage Temperature
Range
Power Dissipation (Note 1)
Electrostatic Discharge
Symbol
V
R
Value
120
200
250
120
200
250
200
625
−55
to
+150
385
HM < 500
MM < 400
Unit
Vdc
http://onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
3
1
CATHODE
ANODE
SC−88A
5
1
CATHODE
ANODE
4
CATHODE
mAdc
mAdc
°C
mW
V
V
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
1
3
3
ANODE
V
RRM
Vdc
I
F
I
FM(surge)
T
J
, T
stg
P
D
ESD
MARKING DIAGRAMS
3
Jx M
G
G
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
5
3
1
SC−88A (SOT−353)
CASE 419A
1
4
Jx M
G
G
2
3
x
= P, R, or S
P
= BAS19LT1
R
= BAS20LT1
S
= BAS21LT1 or BAS21DW5T1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2007
January, 2007
−
Rev. 9
1
Publication Order Number:
BAS19LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
