BAS40−04LT1
Preferred Device
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
•
Extremely Fast Switching Speed
•
Low Forward Voltage
Features
http://onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODES
ANODE
1
CATHODE
2
3
CATHODE/ANODE
•
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction and Storage Temper-
ature Range
Forward Continuous Current
Single Forward Current
Thermal Resistance
Junction−to−Ambient
t
v
1s
t
v
10 ms
Symbol
V
R
P
F
225
1.8
T
J,
T
stg
I
FM
I
FSM
R
qJA
−55 to
+150
120
200
600
508
(Note 1)
311
(Note 2)
mW
mW/°C
°C
mA
mA
°C/W
1
Value
40
Unit
V
3
MARKING
DIAGRAM
2
CB D
SOT−23 (TO−236AB)
CASE 318
Style 11
CB
D
= Specific Device Code
= Date Code
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
ORDERING INFORMATION
Device
BAS40−04LT1
BAS40−04LT1G
Package
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000/ Tape &
Reel
3000/ Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2004
1
March, 2004 − Rev. 8
Publication Order Number:
BAS40−04LT1/D