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BAT54SLT1G 参数 Datasheet PDF下载

BAT54SLT1G图片预览
型号: BAT54SLT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 双肖特基势垒二极管 [Dual Series Schottky Barrier Diodes]
分类和应用: 整流二极管测试光电二极管PC快速恢复二极管
文件页数/大小: 4 页 / 51 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BAT54SLT1
Preferred Device
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
http://onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
225
1.8
I
F
T
J
T
stg
200 Max
125 Max
−55 to +150
mW
mW/°C
mA
°C
°C
Value
30
Unit
Volts
30 VOLT
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
ANODE
2
CATHODE
3
CATHODE/ANODE
MARKING
DIAGRAM
3
3
LD3
1
2
(TO−236AB)
SOT−23
CASE 318
Style 11
1
2
ORDERING INFORMATION
Device
BAT54SLT1
BAT54SLT1G
Package
SOT−23
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 8
Publication Order Number:
BAT54SLT1/D