BAV99LT1G
Dual Series
Switching Diode
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
ANODE
1
CATHODE
2
MAXIMUM RATINGS
(Each Diode)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 s
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
3
CATHODE/ANODE
3
1
2
CASE 318
SOT−23
STYLE 11
MARKING DIAGRAM
A7 MG
G
1
A7 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−65
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
BAV99LT1G
BAV99LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000/Tape & Reel
10,000/Tape & Reel
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
December, 2010
−
Rev. 7
1
Publication Order Number:
BAV99LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
