Transys
Electronics
L I M I T E D
SOT-23 Plastic-Encapsulate Diodes
BAW56LT1
FEATURES
Power dissipation
P
D:
225
mW (Tamb=25℃)
1. 0
SWITCHING DIODE
SOT-23
Forward Current
200 m A
I
F:
Reverse Voltage
70
V
V
R
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
2. 4
1. 3
2. 9
1. 9
0. 95
0. 95
Unit: mm
M ki ng A1
ar
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
leakage current
Symbol
V
(BR)
I
R
unless otherwise specified)
Test
conditions
MIN
70
2.5
MAX
UNIT
V
I
R
= 100
µ
A
V
R
=70V
0. 4
µ
A
I
F
=1mA
Forward
voltage
V
F
I
F
=10mA
I
F
=50mA
I
F
=150mA
Diode
capacitance
C
D
t
rr
715
855
1000
1250
2
6
mV
V
R
=0V, f=1MHz
pF
nS
Reverse recovery time
ONSEMI [ ON SEMICONDUCTOR ]
