Low Noise Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC549
30
30
5.0
100
625
5.0
1.5
12
–55 to +150
BC550
45
50
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
BC549B,C
BC550B,C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2
BASE
3
EMITTER
COLLECTOR
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0)
(V
CB
= 30 V, I
E
= 0, T
A
= +125°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
V
(BR)CEO
BC549B,C
BC550B,C
V
(BR)CBO
BC549B,C
BC550B,C
V
(BR)EBO
I
CBO
—
—
I
EBO
—
—
—
—
15
5.0
15
nAdc
µAdc
nAdc
30
50
5.0
—
—
—
—
—
—
Vdc
30
45
—
—
—
—
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2001
1
February, 2001 – Rev. 1
Publication Order Number:
BC549B/D
ONSEMI [ ON SEMICONDUCTOR ]
