MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BF420/D
High Voltage Transistors
NPN Silicon
COLLECTOR
2
3
BASE
1
EMITTER
BF420
BF422
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BF420
300
300
5.0
500
625
5.0
1.5
12
– 55 to +150
BF422
250
250
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–11, STYLE 14
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
V(BR)CEO
BF420
BF422
V(BR)CBO
BF420
BF422
V(BR)EBO
BF420
BF422
ICBO
BF420
BF422
IEBO
BF420
BF422
—
—
100
—
—
—
0.01
—
nAdc
5.0
5.0
—
—
µAdc
300
250
—
—
Vdc
300
250
—
—
Vdc
Vdc
v
300
m
s; Duty Cycle
v
2.0%.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1998
1
ONSEMI [ ON SEMICONDUCTOR ]
