LM833
Low Noise, Audio Dual
Operational Amplifier
The LM833 is a standard low−cost monolithic dual general−purpose
operational amplifier employing Bipolar technology with innovative
high−performance concepts for audio systems applications. With high
frequency PNP transistors, the LM833 offers low voltage noise
(4.5 nV/
Hz
), 15 MHz gain bandwidth product, 7.0 V/ms slew rate,
0.3 mV input offset voltage with 2.0
mV/°C
temperature coefficient of
input offset voltage. The LM833 output stage exhibits no dead−band
crossover distortion, large output voltage swing, excellent phase and
gain margins, low open loop high frequency output impedance and
symmetrical source/sink AC frequency response.
For an improved performance dual/quad version, see the MC33079
family.
Features
1
LM833N
A
WL
YY
WW
G
http://onsemi.com
MARKING
DIAGRAMS
8
PDIP−8
N SUFFIX
CASE 626
1
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
LM833N
AWL
YYWWG
•
•
•
•
•
•
•
•
•
Low Voltage Noise: 4.5 nV/
Hz
High Gain Bandwidth Product: 15 MHz
High Slew Rate: 7.0 V/ms
Low Input Offset Voltage: 0.3 mV
Low T.C. of Input Offset Voltage: 2.0
mV/°C
Low Distortion: 0.002%
Excellent Frequency Stability
Dual Supply Operation
Pb−Free Packages are Available
1
SOIC−8
D SUFFIX
CASE 751
1
LM833
A
L
Y
W
G
LM833
ALYW
G
MAXIMUM RATINGS
Rating
Supply Voltage (V
CC
to V
EE
)
Input Differential Voltage Range (Note 1)
Input Voltage Range (Note 1)
Output Short Circuit Duration (Note 2)
Operating Ambient Temperature Range
Operating Junction Temperature
Storage Temperature
ESD Protection at any Pin
− Human Body Model
− Machine Model
Maximum Power Dissipation (Notes 2 and 3)
Symbol
V
S
V
IDR
V
IR
t
SC
T
A
T
J
T
stg
V
esd
600
200
P
D
500
mW
Value
+36
30
±15
Indefinite
−40 to +85
+150
−60 to +150
°C
°C
°C
V
Unit
V
V
V
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
PIN CONNECTIONS
Output 1
1
8
V
CC
Output 2
2
1
7
Inputs 1
3
2
6
Inputs 2
5
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Either or both input voltages must not exceed the magnitude of V
CC
or V
EE
.
2. Power dissipation must be considered to ensure maximum junction
temperature (T
J
) is not exceeded (see power dissipation performance
characteristic).
3. Maximum value at T
A
≤
85°C.
V
EE
4
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 5
Publication Order Number:
LM833/D
ONSEMI [ ON SEMICONDUCTOR ]
