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MBR2060CT 参数 Datasheet PDF下载

MBR2060CT图片预览
型号: MBR2060CT
PDF下载: 下载PDF文件 查看货源
内容描述: 开关模式电源整流器TO- 220 / D2PAK表面贴装功率封装 [SWITCHMODE Power Rectifiers TO−220/D2PAK Surface Mount Power Package]
分类和应用: 二极管开关局域网
文件页数/大小: 5 页 / 130 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MBRB2060CT, MBR2060CT
SWITCHMODEt
Power Rectifiers
TO−220/D
2
PAK Surface Mount Power
Package
These state−of−the−art devices employ the use of the Schottky
Barrier principle with a platinum barrier metal.
Features
http://onsemi.com
Package Designed for Power Surface Mount Applications (D
2
PAK)
Center−Tap Configuration (D
2
PAK)
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured
Not Sheared (D
2
PAK)
Similar in Size to Industry Standard TO−220 Package
Pb−Free Packages are Available
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES, 60 VOLTS
1
4
3
4
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
D
2
PAK,
1.9 Grams (Approximately)
TO−220
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds (D
2
PAK)
Device Meets MSL1 Requirements (D
2
PAK)
ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
Rating
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Value
60
Unit
V
4
1
3
1
D
2
PAK
CASE 418B
STYLE 3
3
TO−220AB
CASE 221A
STYLE 6
2
MAXIMUM RATINGS
(Per Leg)
MARKING DIAGRAMS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 110°C) Total Device
Peak Repetitive Forward Current
(Rated V
R
, Square Wave,
20 kHz, T
C
= 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current
(2.0
ms,
1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
10
20
20
A
A
AY WW
B2060G
AKA
AY WW
B2060G
AKA
I
FSM
150
A
I
RRM
T
stg
T
J
dv/dt
0.5
−65
to +175
−65
to +175
10,000
A
°C
°C
V/ms
A
Y
WW
B2060
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
©
Semiconductor Components Industries, LLC, 2009
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
September, 2009
Rev. 8
1
Publication Order Number:
MBRB2060CT/D