MBRS1100T3, MBRS190T3
Preferred Devices
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
Features
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
90, 100 VOLTS
•
•
•
•
•
•
•
Pb−Free Packages are Available
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage − 100 Volts
175°C Operating Junction Temperature
Guardring for Stress Protection
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYW
B1xG
B1
x
A
Y
W
G
= Device Code
= C for MBRS1100T3
9 for MBRS190T3
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Mechanical Characteristics
•
Case: Epoxy, Molded
•
Weight: 95 mg (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•
Shipped in 12 mm Tape and Reel, 2500 units per reel
•
Cathode Polarity Band
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBRS190T3
MBRS1100T3
Average Rectified Forward Current
T
L
= 163°C
T
L
= 148°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature (Note 1)
Voltage Rate of Change
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
1.0
2.0
I
FSM
50
A
Value
Unit
V
90
100
A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
T
J
dv/dt
−65 to +175
10
°C
V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
©
Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 9
Publication Order Number:
MBRS1100T3/D