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MC10H101L 参数 Datasheet PDF下载

MC10H101L图片预览
型号: MC10H101L
PDF下载: 下载PDF文件 查看货源
内容描述: 四OR / NOR门 [Quad OR/NOR Gate]
分类和应用: 触发器逻辑集成电路
文件页数/大小: 6 页 / 151 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MC10H101
PACKAGE DIMENSIONS
SOEIAJ−16
CASE 966−01
ISSUE A
16
9
L
E
Q
1
E H
E
M
_
L
DETAIL P
1
8
Z
D
A
VIEW P
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH OR PROTRUSIONS AND ARE MEASURED
AT THE PARTING LINE. MOLD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
DIM
A
A
1
b
c
D
E
e
H
E
L
L
E
M
Q
1
Z
MILLIMETERS
MIN
MAX
−−−
2.05
0.05
0.20
0.35
0.50
0.10
0.20
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10
_
0
_
0.70
0.90
−−−
0.78
INCHES
MIN
MAX
−−− 0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10
_
0
_
0.028
0.035
−−− 0.031
e
b
0.13 (0.005)
M
A
1
0.10 (0.004)
−A−
16
9
CDIP−16
L SUFFIX
CERAMIC DIP PACKAGE
CASE 620−10
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030)
WHERE THE LEAD ENTERS THE CERAMIC
BODY.
DIM
A
B
C
D
E
F
G
H
K
L
M
N
INCHES
MIN
MAX
0.750
0.785
0.240
0.295
−−− 0.200
0.015
0.020
0.050 BSC
0.055
0.065
0.100 BSC
0.008
0.015
0.125
0.170
0.300 BSC
0
_
15
_
0.020
0.040
MILLIMETERS
MIN
MAX
19.05
19.93
6.10
7.49
−−−
5.08
0.39
0.50
1.27 BSC
1.40
1.65
2.54 BSC
0.21
0.38
3.18
4.31
7.62 BSC
0
_
15
_
0.51
1.01
−B−
1
8
C
L
−T−
SEATING
PLANE
N
E
F
D
G
16 PL
K
M
J
16 PL
0.25 (0.010)
M
M
T B
S
0.25 (0.010)
T A
S
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