MC78L00A Series, NCV78L00A
8.0
VO, OUTPUT VOLTAGE (V)
MC78L05AC
V
out
= 5.0 V
T
J
= 25°C
I
O
= 1.0 mA
4.0
I
O
= 40 mA
2.0
I
O
= 100 mA
V I −V O , INPUT/OUTPUT DIFFERENTIAL VOLTAGE (V)
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
I
O
= 40 mA
I
O
= 1.0 mA
Dropout of Regulation is
defined as when
V
O
= 2% of V
O
I
O
= 70 mA
6.0
0
0
2.0
4.0
6.0
V
I
, INPUT VOLTAGE (V)
8.0
10
Figure 3. Dropout Characteristics
Figure 4. Dropout Voltage versus
Junction Temperature
4.2
I IB , INPUT BIAS CURRENT (mA)
4.0
3.8
3.6
3.4
3.2
3.0
0
0
25
50
75
100
T
A
, AMBIENT TEMPERATURE (°C)
125
MC78L05AC
V
I
= 10 V
V
O
= 5.0 V
I
O
= 40 mA
I IB , INPUT BIAS CURRENT (mA)
5.0
4.0
3.0
2.0
1.0
0
0
5.0
10
15
20
25
V
I
, INPUT VOLTAGE (V)
30
35
40
MC78L05AC
V
out
= 5.0 V
I
O
= 40 mA
T
J
= 25°C
Figure 5. Input Bias Current versus
Ambient Temperature
Figure 6. Input Bias Current
versus Input Voltage
R
θ
JA, THERMAL RESISTANCE JUNCTION-TO-AIR (
°
C/W)
PD , POWER DISSIPATION (mW)
150
130
P
D(max)
for T
A
= 50°C
2.8
2.4
No Heatsink
1000
90
70
50
30
0
10
R
qJA
20
100
R
qJA
= 200°C/W
P
D(max)
to 25°C = 625 mW
10
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (°C)
150
L, LENGTH OF COPPER (mm)
Figure 7. Maximum Average Power Dissipation versus
Ambient Temperature − TO−92 Type Package
Figure 8. SOIC−8 Thermal Resistance and Maximum
Power Dissipation versus P.C.B. Copper Length
http://onsemi.com
7
ÎÎÎ Î
Î Î
ÎÎÎÎÎÎÎ
Î ÎÎÎ
ÎÎÎÎÎÎÎ
L
2.0 oz.
Copper
L
3.0 mm
30
40
110
Graph represents symmetrical layout
2.0
1.6
1.2
0.8
0.4
50
PD, MAXIMUM POWER DISSIPATION (W)
10,000
170
3.2
ONSEMI [ ON SEMICONDUCTOR ]
