MJE340
32
PD, POWER DISSIPATION (WATTS)
28
0.8
20
16
12
8.0
4.0
0
0
20
40
60
80
100
120
140
160
0
10
20
MJE340
0.2
IC/IB = 5.0
30
50
100
200
IC, COLLECTOR CURRENT (mA)
300
500
V, VOLTAGE (VOLTS)
24
1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
VCE(sat) @ IC/IB = 10
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
Figure 2. “On” Voltages
ACTIVE–REGION SAFE OPERATING AREA
1.0
IC, COLLECTOR CURRENT (AMP)
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
10
50
70 100
200
20
30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
300
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25°C
SINGLE PULSE
TJ = 150°C
dc
1.0 ms
10
µs
500
µs
Figure 3. MJE340
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transis-
tor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 3 is based on T J(pk) = 150
_
C; TC is variable depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided T J(pk)
150
_
C. At high case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by second breakdown.
v
300
200
hFE , DC CURRENT GAIN
TJ = 150°C
+100°C
+ 25°C
30
20
– 55°C
VCE = 10 V
VCE = 2.0 V
100
70
50
10
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
70
100
200
300
500
Figure 4. DC Current Gain
2
Motorola Bipolar Power Transistor Device Data
ONSEMI [ ON SEMICONDUCTOR ]
