ON Semiconductort
Dual Switching Diode
MMBD7000LT1
ON Semiconductor Preferred Device
3
1
2
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
ANODE
2
CATHODE
3
CATHODE/ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
qJA
PD
556
300
2.4
R
qJA
TJ, Tstg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBD7000LT1 = M5C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100
µAdc)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125°C)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
Capacitance (VR = 0 V)
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
V(BR)
IR
IR2
IR3
VF
100
—
—
—
0.55
0.67
0.75
—
1.0
3.0
100
Vdc
µAdc
Vdc
0.7
0.82
1.1
4.0
1.5
ns
pF
trr
C
—
—
1
November, 2001 – Rev. 2
Publication Order Number:
MMBD7000LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
