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MMBD701LT3 参数 Datasheet PDF下载

MMBD701LT3图片预览
型号: MMBD701LT3
PDF下载: 下载PDF文件 查看货源
内容描述: 硅热载流子二极管肖特基势垒二极管 [Silicon Hot-Carrier Diodes Schottky Barrier Diodes]
分类和应用: 二极管
文件页数/大小: 4 页 / 124 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MBD701, MMBD701LT1
Preferred Device
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
http://onsemi.com
MARKING
DIAGRAMS
TO−92 2−Lead
CASE 182
STYLE 1
1
2
2
CATHODE
1
ANODE
Extremely Low Minority Carrier Lifetime
15 ps (Typ)
Very Low Capacitance
1.0 pF @ V
R
= 20 V
High Reverse Voltage
to 70 V
Low Reverse Leakage
200 nA (Max)
Pb−Free Packages are Available
MBD
701
AYWW
G
G
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
MBD701
@ T
A
= 25°C
MMBD701LT
Derate above 25°C
MBD701
MMBD701LT
T
J
T
stg
Symbol
V
R
P
F
Value
70
280
200
2.8
2.0
−55
to +125
−55
to +150
Unit
V
mW
mW/°C
°C
°C
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 8
5H M
G
G
1
3
CATHODE
1
ANODE
Operating Junction Temperature
Range
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW = Work Week
5H = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mAdc)
Total Capacitance
(V
R
= 20 V, f = 1.0 MHz) Figure 1
Reverse Leakage
(V
R
= 35 V) Figure 3
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
Forward Voltage
(I
F
= 10 mAdc) Figure 4
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
Min
70
Typ
0.5
9.0
0.42
0.7
Max
1.0
200
0.5
1.0
Unit
V
pF
nAdc
Vdc
Vdc
MBD701
ORDERING INFORMATION
Device
MBD701G
MMBD701LT1
MMBD701LT1G
MMBD701LT3
MMBD701LT3G
Package
TO−92
TO−92
(Pb−Free)
SOT−23
Shipping
1,000 Units / Box
1,000 Units / Box
3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel
(Pb−Free)
SOT−23
10,000/T
ape & Reel
SOT−23 10,000/T
ape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2009
March, 2009
Rev. 5
1
Publication Order Number:
MBD701/D