MMBD7000LT1G
Dual Switching Diode
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
1
ANODE
2
CATHODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
1
2
3
CATHODE/ANODE
3
SOT−23 (TO−236AB)
CASE 318
STYLE 11
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
Unit
mW
mW/°C
°C/W
mW
M5C
M
G
1
= Specific Device Code
= Date Code*
= Pb−Free Package
M5C MG
G
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
mW/°C
°C/W
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
°C
Device
MMBD7000LT1G
MMBD7000LT3G
Package
SOT−23
(Pb−Free)
Shipping
†
3000 Tape & Reel
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
August, 2009
−
Rev. 5
1
Publication Order Number:
MMBD7000LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
