MMBT2222LT1G,
MMBT2222ALT1G
General Purpose Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
MMBT2222LT1G
MMBT2222ALT1G
Collector
−Base
Voltage
MMBT2222LT1G
MMBT2222ALT1G
MMBT2222LT1G
MMBT2222ALT1G
Symbol
V
CEO
Value
30
40
60
75
5.0
6.0
600
1100
Unit
Vdc
1
BASE
2
EMITTER
3
V
CBO
Vdc
Emitter
−Base
Voltage
V
EBO
Vdc
1
2
SOT−23
CASE 318
STYLE 6
Collector Current
−
Continuous
Collector Current
−
Peak (Note 3)
I
C
I
CM
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
D
Max
225
1.8
556
300
2.4
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
xxx = 1P or M1B
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING DIAGRAM
R
qJA
P
D
xxx M
G
G
R
qJA
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Reference SOA curve.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
October, 2009
−
Rev. 9
1
Publication Order Number:
MMBT2222LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
