MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MMBT3904WT1/D
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT–323/SC–70 which is designed for low power surface mount
applications.
NPN
MMBT3904WT1
PNP
MMBT3906WT1
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
Symbol
VCEO
VCBO
VEBO
IC
Value
40
–40
60
–40
6.0
–5.0
200
–200
Unit
Vdc
Vdc
Vdc
3
Collector Current — Continuous MMBT3904WT1
MMBT3906WT1
mAdc
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation(1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R
q
JA
TJ, Tstg
Max
150
833
– 55 to +150
Unit
mW
°C/W
°C
CASE 419–02, STYLE 3
SOT–323/SC–70
DEVICE MARKING
MMBT3904WT1 = AM
MMBT3906WT1 = 2A
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
(IC = –10
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
(IE = –10
m
Adc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
V(BR)CEO
MMBT3904WT1
MMBT3906WT1
V(BR)CBO
MMBT3904WT1
MMBT3906WT1
V(BR)EBO
MMBT3904WT1
MMBT3906WT1
IBL
MMBT3904WT1
MMBT3906WT1
ICEX
MMBT3904WT1
MMBT3906WT1
—
—
50
–50
—
—
50
–50
nAdc
6.0
–5.0
—
—
nAdc
60
–40
—
—
Vdc
40
–40
—
—
Vdc
Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
300
m
s; Duty Cycle
2.0%.
v
v
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
ONSEMI [ ON SEMICONDUCTOR ]
