MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
Symbol
V
CEO
V
CBO
V
EBO
I
C
5550
140
160
6.0
600
5551
160
180
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
2
EMITTER
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
SOT−23 (TO−236)
CASE 318
STYLE 6
xxxM
xxx = MMBT550LT1 = M1F,
MMBT5551LT1, LT3, LT1G = G1
M = Month Code
ORDERING INFORMATION
Device
MMBT5550LT1
MMBT5550LT1G
MMBT5551LT1
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
SOT−23
Shipping
†
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
10,000 Tape & Reel
°C
MMBT5551LT1G
MMBT5551LT3
MMBT5551LT3G
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2004
1
December, 2004 − Rev. 4
Publication Order Number:
MMBT5550LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
