ON Semiconductort
High Voltage Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBTA43
200
200
6.0
500
Unit
Vdc
Vdc
Vdc
MMBTA42LT1
ON Semiconductor Preferred Device
3
1
mAdc
2
DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
qJA
PD
556
300
2.4
R
qJA
TJ, Tstg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
CASE 318–08, STYLE 6
SOT–23 (TO–236)
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100
mAdc,
IE = 0)
Emitter–Base Breakdown Voltage
(IE = 100
mAdc,
IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
V(BR)CEO
300
V(BR)CBO
300
V(BR)EBO
ICBO
—
IEBO
—
0.1
0.1
µAdc
6.0
—
—
Vdc
µAdc
—
Vdc
Vdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
1
June, 2001 – Rev. 3
Publication Order Number:
MMBTA42LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
