欢迎访问ic37.com |
会员登录 免费注册
发布采购

MMBTA42LT1 参数 Datasheet PDF下载

MMBTA42LT1图片预览
型号: MMBTA42LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压晶体管 [High Voltage Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 58 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号MMBTA42LT1的Datasheet PDF文件第1页浏览型号MMBTA42LT1的Datasheet PDF文件第3页浏览型号MMBTA42LT1的Datasheet PDF文件第4页  
MMBTA42LT1, MMBTA43LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
(V
CB
= 160 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
MMBTA42
MMBTA43
f
T
C
cb
3.0
4.0
50
MHz
pF
h
FE
Both Types
Both Types
MMBTA42
MMBTA43
V
CE(sat)
MMBTA42
MMBTA43
V
BE(sat)
0.5
0.5
0.9
Vdc
25
40
40
40
Vdc
MMBTA42
MMBTA43
I
EBO
MMBTA42
MMBTA43
0.1
0.1
V
(BR)CEO
MMBTA42
MMBTA43
V
(BR)CBO
MMBTA42
MMBTA43
V
(BR)EBO
I
CBO
0.1
0.1
mAdc
300
200
6.0
Vdc
mAdc
300
200
Vdc
Vdc
Symbol
Min
Max
Unit
http://onsemi.com
2